NPN bipolar junction power transistor featuring a 350V collector-emitter voltage (VCEO) and a 500mA maximum collector current. This component offers a 375V collector-base voltage (VCBO) and a 100V collector-emitter breakdown voltage. With a 20W power dissipation and a transition frequency of 6MHz, it is housed in a TO-225 package and is RoHS compliant.
PackageTO-225-3
Current Rating500mA
PolarityNPN
Power20W
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Technical Specifications
Onsemi BD159G technical specifications.
General
Package/Case
TO-225-3
Collector Base Voltage (VCBO)
375V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Voltage (VCEO)
350V
Collector-emitter Voltage-Max
3V
Current Rating
500mA
Emitter Base Voltage (VEBO)
5V
hFE Min
30
Lead Free
Lead Free
Max Breakdown Voltage
350V
Max Collector Current
500mA
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
20W
Number of Elements
1
Package Quantity
500
Packaging
Bulk
Polarity
NPN
Power Dissipation
20W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
6MHz
DC Rated Voltage
350V
Compliance
RoHS
Compliant
Datasheet
Onsemi BD159G Datasheet
Download the complete datasheet for Onsemi BD159G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.