NPN bipolar junction power transistor featuring a 350V collector-emitter voltage (VCEO) and a 500mA maximum collector current. This component offers a 375V collector-base voltage (VCBO) and a 100V collector-emitter breakdown voltage. With a 20W power dissipation and a transition frequency of 6MHz, it is housed in a TO-225 package and is RoHS compliant.
PackageTO-225-3
Current Rating500mA
PolarityNPN
Power20W
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Technical Specifications
Onsemi BD159G technical specifications.
General
| Package/Case | TO-225-3 |
| Collector Base Voltage (VCBO) | 375V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Voltage (VCEO) | 350V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 350V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 20W |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 20W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 6MHz |
| DC Rated Voltage | 350V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BD159G Datasheet
Download the complete datasheet for Onsemi BD159G to view detailed technical specifications.
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