NPN bipolar power transistor featuring 350V collector-emitter breakdown voltage and 500mA maximum collector current. This through-hole component, housed in a TO-126 package, offers a transition frequency of 155MHz and a minimum hFE of 30. With a maximum power dissipation of 20W and lead-free, RoHS-compliant construction, it operates across a wide temperature range from -65°C to 50°C.
Onsemi BD159STU technical specifications.
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | 375V |
| Collector Emitter Breakdown Voltage | 350V |
| Collector Emitter Voltage (VCEO) | 350V |
| Collector-emitter Voltage-Max | 700mV |
| Contact Plating | Tin, Matte |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 350V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 50°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 20W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 60 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 20W |
| RoHS Compliant | Yes |
| Transition Frequency | 155MHz |
| DC Rated Voltage | 350V |
| Weight | 0.761g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BD159STU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
