NPN bipolar power transistor featuring 350V collector-emitter breakdown voltage and 500mA maximum collector current. This through-hole component, housed in a TO-126 package, offers a transition frequency of 155MHz and a minimum hFE of 30. With a maximum power dissipation of 20W and lead-free, RoHS-compliant construction, it operates across a wide temperature range from -65°C to 50°C.
PackageTO-126
Current Rating500mA
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi BD159STU technical specifications.
General
Package/Case
TO-126
Collector Base Voltage (VCBO)
375V
Collector Emitter Breakdown Voltage
350V
Collector Emitter Voltage (VCEO)
350V
Collector-emitter Voltage-Max
700mV
Contact Plating
Tin, Matte
Current Rating
500mA
Emitter Base Voltage (VEBO)
5V
hFE Min
30
Lead Free
Lead Free
Max Breakdown Voltage
350V
Max Collector Current
500mA
Max Operating Temperature
50°C
Min Operating Temperature
-65°C
Max Power Dissipation
20W
Mount
Through Hole
Number of Elements
1
Package Quantity
60
Packaging
Rail/Tube
Polarity
NPN
Power Dissipation
20W
RoHS Compliant
Yes
Transition Frequency
155MHz
DC Rated Voltage
350V
Weight
0.761g
Compliance
RoHS
Compliant
Datasheet
Onsemi BD159STU Datasheet
Download the complete datasheet for Onsemi BD159STU to view detailed technical specifications.
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