NPN Epitaxial Silicon Transistor for through-hole mounting in a TO-126 package. Features a maximum collector current of 3A and a collector-emitter breakdown voltage of 45V. Offers a transition frequency of 3MHz and a minimum hFE of 40. Maximum power dissipation is 30W, with an operating temperature range from -65°C to 150°C. Lead-free and RoHS compliant.
Onsemi BD17510STU technical specifications.
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | 45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 800mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 800mV |
| Contact Plating | Tin, Matte |
| Current Rating | 3A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 60 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 30W |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | 45V |
| Weight | 0.761g |
| RoHS | Compliant |
No datasheet is available for this part.
