NPN Epitaxial Silicon Transistor, TO-126 package, featuring a 45V Collector Emitter Voltage (VCEO) and 3A maximum collector current. This bipolar junction transistor offers a 30W power dissipation and a transition frequency of 3MHz. With a minimum hFE of 40 and a collector emitter saturation voltage of 800mV, it operates across a wide temperature range from -65°C to 150°C. The through-hole mount design with tin matte plating ensures reliable connectivity.
Frequency3MHz
PackageTO-126
Current Rating3A
MountingThrough Hole
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Technical Specifications
Onsemi BD17516STU technical specifications.
General
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | 45V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 800mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 800mV |
| Contact Plating | Tin, Matte |
| Current Rating | 3A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 60 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 30W |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | 45V |
| Weight | 0.761g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BD17516STU Datasheet
Download the complete datasheet for Onsemi BD17516STU to view detailed technical specifications.
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