PNP Epitaxial Silicon Transistor, TO-126 package, featuring a maximum collector current of 2A and a collector-emitter voltage of 60V. This through-hole mounted component offers a DC rated voltage of -60V and a transition frequency of 3MHz. With a minimum hFE of 25 and a maximum power dissipation of 25W, it operates across a wide temperature range from -65°C to 150°C. The transistor is RoHS compliant with tin, matte contact plating.
Frequency3MHz
PackageTO-126
Current Rating-2A
MountingThrough Hole
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Technical Specifications
Onsemi BD236STU technical specifications.
General
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -600mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 600mV |
| Contact Plating | Tin, Matte |
| Current Rating | -2A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 60 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 25W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | -60V |
| Weight | 0.761g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BD236STU Datasheet
Download the complete datasheet for Onsemi BD236STU to view detailed technical specifications.
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