The BD238G is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 80V and a maximum collector current of 2A. It is packaged in a TO-225-3 flange mount package and is RoHS compliant. The transistor has a maximum power dissipation of 25W and operates over a temperature range of -55°C to 150°C.
PackageTO-225-3
PolarityPNP
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Technical Specifications
Onsemi BD238G technical specifications.
General
| Package/Case | TO-225-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector-emitter Voltage-Max | 600mV |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BD238G Datasheet
Download the complete datasheet for Onsemi BD238G to view detailed technical specifications.
No datasheet is available for this part.
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