PNP Bipolar Junction Transistor (BJT) with a 2A continuous collector current rating and 80V collector-emitter voltage. Features a maximum power dissipation of 25W and a transition frequency of 3MHz. Packaged in a TO-126 through-hole mount with tin, matte plating. Operates across a temperature range of -65°C to 150°C and is RoHS compliant.
Frequency3MHz
PackageTO-126
Current Rating-2A
MountingThrough Hole
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Technical Specifications
Onsemi BD238STU technical specifications.
General
Package/Case
TO-126
Collector Base Voltage (VCBO)
-100V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
-600mV
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
600mV
Contact Plating
Tin, Matte
Current Rating
-2A
Emitter Base Voltage (VEBO)
-5V
Frequency
3MHz
Gain Bandwidth Product
3MHz
Height
11mm
hFE Min
25
Lead Free
Lead Free
Length
8mm
Max Breakdown Voltage
80V
Max Collector Current
2A
Max Frequency
3MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
25W
Mount
Through Hole
Number of Elements
1
Package Quantity
60
Packaging
Rail/Tube
Polarity
PNP
Power Dissipation
25W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
3MHz
DC Rated Voltage
-80V
Weight
0.761g
Width
3.25mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BD238STU Datasheet
Download the complete datasheet for Onsemi BD238STU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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