NPN Epitaxial Silicon Transistor, TO-220-3 package, designed for through-hole mounting. Features a maximum collector current of 2A and a collector-emitter voltage (VCEO) of 70V. Offers a minimum DC current gain (hFE) of 15 and a maximum power dissipation of 30W. Operates across a wide temperature range from -65°C to 150°C, with tin matte contact plating. This RoHS compliant component is supplied in a rail/tube package.
PackageTO-220-3
Current Rating2A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi BD239ATU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 700mV |
| Collector Emitter Voltage (VCEO) | 70V |
| Collector-emitter Voltage-Max | 700mV |
| Contact Plating | Tin, Matte |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 15 |
| Lead Free | Lead Free |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 30W |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Weight | 1.8g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BD239ATU Datasheet
Download the complete datasheet for Onsemi BD239ATU to view detailed technical specifications.
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