
NPN Epitaxial Silicon Transistor for through-hole mounting in a TO-220-3 package. Features a maximum collector current of 2A and a collector-emitter voltage (VCEO) of 90V. Offers a maximum power dissipation of 30W, with operating temperatures ranging from -65°C to 150°C. Includes a collector-emitter saturation voltage of 700mV and an emitter-base voltage (VEBO) of 5V. This RoHS compliant component is supplied in a rail/tube package.
Onsemi BD239BTU technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 700mV |
| Collector Emitter Voltage (VCEO) | 90V |
| Collector-emitter Voltage-Max | 700mV |
| Contact Plating | Tin, Matte |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 15.7mm |
| hFE Min | 15 |
| Lead Free | Lead Free |
| Length | 9.9mm |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 30W |
| RoHS Compliant | Yes |
| DC Rated Voltage | 80V |
| Weight | 1.8g |
| Width | 4.5mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BD239BTU to view detailed technical specifications.
No datasheet is available for this part.
