NPN Epitaxial Silicon Transistor, TO-220-3 package. Features 100V collector-emitter breakdown voltage, 2A continuous collector current, and 30W power dissipation. Offers a minimum hFE of 15 and a collector-emitter saturation voltage of 700mV. Operates from -65°C to 150°C, with tin-matte contact plating. Through-hole mount, lead-free, and RoHS compliant.
PackageTO-220-3
Current Rating2A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi BD239CTU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 700mV |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 700mV |
| Contact Plating | Tin, Matte |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 15.7mm |
| hFE Min | 15 |
| Lead Free | Lead Free |
| Length | 9.9mm |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 30W |
| RoHS Compliant | Yes |
| Series | BD239C |
| DC Rated Voltage | 100V |
| Weight | 1.8g |
| Width | 4.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BD239CTU Datasheet
Download the complete datasheet for Onsemi BD239CTU to view detailed technical specifications.
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