NPN bipolar junction transistor (BJT) in a TO-220 package, designed for through-hole mounting. Features a 60V collector-emitter breakdown voltage and a continuous collector current rating of 3A. Maximum power dissipation is 40W, with a maximum operating temperature of 150°C. This RoHS compliant component offers a minimum DC current gain (hFE) of 10.
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Onsemi BD241ATU technical specifications.
| Package/Case | TO-220 |
| Collector Base Voltage (VCBO) | 70V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 1.2V |
| Continuous Collector Current | 3A |
| Current Rating | 3A |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 10 |
| Lead Free | Lead Free |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | BD241 |
| DC Rated Voltage | 60V |
| RoHS | Compliant |
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