PNP Bipolar Junction Transistor (BJT) in a TO-220 package, designed for through-hole mounting. Features a maximum collector-emitter voltage (VCEO) of 100V and a continuous collector current rating of 3A. Offers a minimum DC current gain (hFE) of 25 and a transition frequency of 3MHz. Maximum power dissipation is 40W, with an operating temperature range from -65°C to 150°C.
PackageTO-220-3
Current Rating-3A
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi BD242C technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | -100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1.2V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 1.2V |
| Current Rating | -3A |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 300uA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 200 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 40W |
| RoHS Compliant | No |
| Transition Frequency | 3MHz |
| DC Rated Voltage | -100V |
| Weight | 1.8g |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi BD242C Datasheet
Download the complete datasheet for Onsemi BD242C to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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