PNP Bipolar Junction Transistor (BJT) in a TO-220-3 package. Features a maximum collector current of 3A and a collector-emitter voltage of 100V. Offers a minimum DC current gain (hFE) of 25 and a transition frequency of 3MHz. Designed for power applications with a maximum power dissipation of 40W and operating temperatures from -65°C to 150°C. RoHS compliant with tin, matte contact plating.
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Onsemi BD242CG technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 115V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1.2V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 1.2V |
| Contact Plating | Tin, Matte |
| Current Rating | -3A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 40W |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 40mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | -100V |
| RoHS | Compliant |
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