
NPN bipolar junction transistor (BJT) in a TO-220-3 package, designed for through-hole mounting. Features a maximum collector-emitter voltage (VCEO) of 100V and a continuous collector current rating of 6A. Offers a maximum power dissipation of 65W and a minimum DC current gain (hFE) of 15. Operates across a wide temperature range from -65°C to 150°C.
Onsemi BD243C technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 1.5V |
| Contact Plating | Tin, Matte |
| Current Rating | 6A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 3MHz |
| Height | 15.95mm |
| hFE Min | 15 |
| Lead Free | Lead Free |
| Length | 10mm |
| Max Collector Current | 6A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 65W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Bulk |
| Polarity | NPN |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Weight | 1.8g |
| Width | 4.5mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BD243C to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
