
NPN Bipolar Junction Transistor (BJT) with a 6A maximum collector current and 100V collector-emitter breakdown voltage. Features a 1.5V collector-emitter saturation voltage and a 3MHz transition frequency. Housed in a TO-220-3 package, this component offers a minimum DC current gain (hFE) of 30 and a maximum power dissipation of 65W. Operating temperature range spans from -65°C to 150°C.
Onsemi BD243CG technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 1.5V |
| Current Rating | 6A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| Height | 15.75mm |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Length | 10.28mm |
| Max Collector Current | 6A |
| Max Frequency | 3MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 65W |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 65W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | 100V |
| Width | 4.82mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BD243CG to view detailed technical specifications.
No datasheet is available for this part.
