PNP Epitaxial Silicon Transistor, TO-220-3 package. Features -60V Collector Base Voltage (VCBO) and 60V Collector Emitter Voltage (VCEO). Offers a continuous collector current rating of -6A and a maximum power dissipation of 65W. Operates across a wide temperature range from -65°C to 150°C. Through-hole mounting with tin, matte contact plating. Lead-free and RoHS compliant.
Onsemi BD244A technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -1.5V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 1.5V |
| Contact Plating | Tin, Matte |
| Current Rating | -6A |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 15 |
| Lead Free | Lead Free |
| Max Collector Current | 6A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 65W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 200 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 65W |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Weight | 1.8g |
| RoHS | Compliant |
No datasheet is available for this part.
