
PNP Bipolar Junction Power Transistor featuring a 6A maximum collector current and 80V collector-emitter voltage. This through-hole component offers a maximum power dissipation of 65W and a transition frequency of 3MHz. It operates within a temperature range of -65°C to 150°C and is housed in a TO-220-3 package with tin, matte plating. The transistor is lead-free and RoHS compliant.
Onsemi BD244B technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 1.5V |
| Contact Plating | Tin, Matte |
| Current Rating | -6A |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 15 |
| Lead Free | Lead Free |
| Max Collector Current | 6A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 65W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 65W |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | -80V |
| Weight | 1.8g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BD244B to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
