The BD249C is a NPN bipolar junction transistor with a collector-emitter voltage rating of 100V and a maximum collector current of 25A. It has a gain bandwidth product of 3MHz and a collector-emitter saturation voltage of 1.8V. The transistor is packaged in a SOT-93-3 case and is rated for a maximum power dissipation of 125W. It operates over a temperature range of -65°C to 150°C and is packaged in a rail or tube format in quantities of 30.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi BD249C datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | SOT-93-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Saturation Voltage | 1.8V |
| Collector-emitter Voltage-Max | 100V |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 25 |
| Lead Free | Contains Lead |
| Max Collector Current | 25A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 125W |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 125W |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi BD249C to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
