The BD249C is a NPN bipolar junction transistor with a collector-emitter voltage rating of 100V and a maximum collector current of 25A. It has a gain bandwidth product of 3MHz and a collector-emitter saturation voltage of 1.8V. The transistor is packaged in a SOT-93-3 case and is rated for a maximum power dissipation of 125W. It operates over a temperature range of -65°C to 150°C and is packaged in a rail or tube format in quantities of 30.
PackageSOT-93-3
PolarityNPN
Power125W
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Technical Specifications
Onsemi BD249C technical specifications.
General
| Package/Case | SOT-93-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Saturation Voltage | 1.8V |
| Collector-emitter Voltage-Max | 100V |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 25 |
| Lead Free | Contains Lead |
| Max Collector Current | 25A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 125W |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 125W |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi BD249C Datasheet
Download the complete datasheet for Onsemi BD249C to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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