Medium power NPN bipolar junction transistor in a TO-126 package. Features a maximum collector current of 4A and a collector-emitter breakdown voltage of 32V. Offers a minimum DC current gain (hFE) of 50 and a transition frequency of 3MHz. With a maximum power dissipation of 36W and a wide operating temperature range from -65°C to 150°C, this lead-free, RoHS-compliant component is suitable for through-hole mounting.
Frequency3MHz
PackageTO-126
Current Rating4A
MountingThrough Hole
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Technical Specifications
Onsemi BD435S technical specifications.
General
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | 32V |
| Collector Emitter Breakdown Voltage | 32V |
| Collector Emitter Saturation Voltage | 200mV |
| Collector Emitter Voltage (VCEO) | 32V |
| Collector-emitter Voltage-Max | 500mV |
| Contact Plating | Tin, Matte |
| Current Rating | 4A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 36W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 250 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 36W |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | 32V |
| Weight | 0.761g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BD435S Datasheet
Download the complete datasheet for Onsemi BD435S to view detailed technical specifications.
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