PNP Power Bipolar Junction Transistor (BJT) featuring a 4A continuous collector current and 45V collector-emitter voltage. This through-hole component offers a maximum power dissipation of 36W and a transition frequency of 3MHz. With a minimum hFE of 40 and a low collector-emitter saturation voltage of -200mV, it is designed for efficient switching applications. The TO-126 package with tin, matte plating ensures reliable connectivity. Operating across a wide temperature range from -65°C to 150°C, this RoHS compliant transistor is supplied in bulk packaging.
Onsemi BD438S technical specifications.
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | -45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -200mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 600mV |
| Contact Plating | Tin, Matte |
| Current Rating | -4A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 36W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 250 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 36W |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | -45V |
| Weight | 0.761g |
| RoHS | Compliant |
No datasheet is available for this part.
