Medium power NPN bipolar junction transistor (BJT) in a TO-126 package. Features a 60V collector-emitter breakdown voltage and a maximum collector current of 4A. Offers a minimum DC current gain (hFE) of 25 and a transition frequency of 3MHz. Designed for through-hole mounting with tin, matte contact plating and a maximum power dissipation of 36W. Operates across a wide temperature range from -65°C to 150°C.
Onsemi BD439S technical specifications.
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 800mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 800mV |
| Contact Plating | Tin, Matte |
| Current Rating | 4A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 36W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 250 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 36W |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | 60V |
| Weight | 0.761g |
| RoHS | Compliant |
No datasheet is available for this part.
