PNP Bipolar Junction Transistor, TO-225 package, featuring a 60V Collector-Emitter Voltage (VCEO) and a 4A Max Collector Current. This power transistor offers a 36W Max Power Dissipation and a transition frequency of 3MHz. With a minimum hFE of 20 and a Collector-Emitter Saturation Voltage of 800mV, it operates across a temperature range of -55°C to 150°C. RoHS compliant and lead-free, it is supplied in bulk packaging.
Onsemi BD440G technical specifications.
| Package/Case | TO-225-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 800mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 800mV |
| Contact Plating | Tin, Matte |
| Current Rating | -4A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 36W |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 36W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | -60V |
| RoHS | Compliant |
No datasheet is available for this part.
