Medium power NPN bipolar junction transistor in a TO-225 package. Features a maximum collector current of 4A and a collector-emitter voltage of 80V. Offers a minimum DC current gain (hFE) of 15 and a transition frequency of 3MHz. Maximum power dissipation is 36W, with an operating temperature range from -55°C to 150°C. This component is RoHS compliant and supplied in bulk packaging.
Onsemi BD441G technical specifications.
| Package/Case | TO-225-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 800mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 800mV |
| Current Rating | 4A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 15 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 36W |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 36W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | 80V |
| RoHS | Compliant |
No datasheet is available for this part.
