NPN bipolar junction transistor (BJT) in a TO-126 package, designed for through-hole mounting. Features a maximum collector current of 4A and a collector-emitter breakdown voltage of 80V. Offers a minimum DC current gain (hFE) of 15 and a transition frequency of 3MHz. Maximum power dissipation is 36W, with operating temperatures ranging from -65°C to 150°C. This RoHS compliant component is lead-free.
Onsemi BD441STU technical specifications.
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 800mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 800mV |
| Current Rating | 4A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 15 |
| Lead Free | Lead Free |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 36W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 60 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 36W |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | 80V |
| Weight | 0.761g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BD441STU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.