Medium power NPN Darlington bipolar junction transistor in a TO-225 package. Features a 60V collector-emitter voltage (VCEO) and a 4A continuous collector current. Offers a minimum DC current gain (hFE) of 750 and a maximum power dissipation of 40W. Operates across a temperature range of -55°C to 150°C, with a low collector-emitter saturation voltage of 2.8V. This component is RoHS and Halogen Free.
PackageTO-225-3
Current Rating-4A
PolarityNPN
Power40W
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Technical Specifications
Onsemi BD677AG technical specifications.
General
Package/Case
TO-225-3
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
2.8V
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
2.8V
Current Rating
-4A
Emitter Base Voltage (VEBO)
5V
Halogen Free
Halogen Free
Height
11.04mm
hFE Min
750
Lead Free
Lead Free
Length
7.74mm
Max Collector Current
4A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
40W
Number of Elements
1
Package Quantity
500
Packaging
Bulk
Polarity
NPN
Power Dissipation
40W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
DC Rated Voltage
-60V
Width
2.66mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BD677AG Datasheet
Download the complete datasheet for Onsemi BD677AG to view detailed technical specifications.
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