
NPN Darlington bipolar junction transistor in a TO-225-3 package. Features a 60V collector-emitter voltage (VCEO) and a 4A maximum collector current. Offers a minimum hFE of 750 and a maximum power dissipation of 40W. Operates within a temperature range of -55°C to 150°C. RoHS and Halogen Free compliant with tin, matte contact plating.
Onsemi BD677G technical specifications.
| Package/Case | TO-225-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 2.5V |
| Contact Plating | Tin, Matte |
| Current Rating | -4A |
| Emitter Base Voltage (VEBO) | 5V |
| Halogen Free | Halogen Free |
| hFE Min | 750 |
| Lead Free | Lead Free |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -60V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BD677G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
