The BD679 is an NPN bipolar junction transistor with a collector-emitter breakdown voltage of 80V and a maximum collector current of 4A. It has a maximum power dissipation of 40W and operates over a temperature range of -55°C to 150°C. The transistor is packaged in a TO-225-3 package and is lead-free. It is RoHS compliant and meets Reach SVHC requirements.
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Onsemi BD679 technical specifications.
| Package/Case | TO-225-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector-emitter Voltage-Max | 2.5V |
| Continuous Collector Current | 4A |
| Current Rating | 4A |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 750 |
| Lead Free | Lead Free |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 40W |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| DC Rated Voltage | 80V |
| RoHS | Not Compliant |
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