Medium Power NPN Darlington Bipolar Power Transistor in TO-126 package. Features 100V collector-emitter breakdown voltage and 4A continuous collector current. Offers a high minimum DC current gain (hFE) of 750. Designed for through-hole mounting with tin, matte contact plating. Operates from -65°C to 150°C with a maximum power dissipation of 40W. RoHS compliant.
PackageTO-126
Current Rating4A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi BD681S technical specifications.
General
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 2.5V |
| Contact Plating | Tin, Matte |
| Continuous Collector Current | 4A |
| Current Rating | 4A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 11mm |
| hFE Min | 750 |
| Lead Free | Lead Free |
| Length | 8mm |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 250 |
| Packaging | Bulk |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Weight | 0.761g |
| Width | 3.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BD681S Datasheet
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