Medium Power NPN Darlington Bipolar Power Transistor in TO-126 package. Features 100V collector-emitter breakdown voltage and 4A continuous collector current. Offers a high minimum DC current gain (hFE) of 750. Designed for through-hole mounting with tin, matte contact plating. Operates from -65°C to 150°C with a maximum power dissipation of 40W. RoHS compliant.
PackageTO-126
Current Rating4A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi BD681S technical specifications.
General
Package/Case
TO-126
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
2.5V
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
2.5V
Contact Plating
Tin, Matte
Continuous Collector Current
4A
Current Rating
4A
Emitter Base Voltage (VEBO)
5V
Height
11mm
hFE Min
750
Lead Free
Lead Free
Length
8mm
Max Collector Current
4A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
40W
Mount
Through Hole
Number of Elements
1
Package Quantity
250
Packaging
Bulk
Polarity
NPN
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
DC Rated Voltage
100V
Weight
0.761g
Width
3.25mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BD681S Datasheet
Download the complete datasheet for Onsemi BD681S to view detailed technical specifications.
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