NPN Bipolar Junction Transistor (BJT) for amplifier applications, featuring a 1W power dissipation and TO-92 package. Offers a 100V collector-emitter breakdown voltage and a 500mA maximum collector current. Achieves a 50MHz transition frequency and a minimum hFE of 40. Designed for through-hole mounting and supplied on a 2000-count tape and reel. Operates across a -55°C to +150°C temperature range and is lead-free and RoHS compliant.
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Onsemi BDC01DRL1G technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 700mV |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 700mV |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1W |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | 100V |
| RoHS | Compliant |
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