PNP Epitaxial Silicon Darlington Bipolar Transistor featuring a -100V Collector Base Voltage and 100V Collector Emitter Breakdown Voltage. This through-hole component offers a maximum collector current of 12A and a minimum hFE of 1000. Designed for high power applications, it boasts an 80W power dissipation and operates within a temperature range of -65°C to 150°C. Packaged in a TO-220-3 case, this lead-free and RoHS compliant device is supplied in bulk.
PackageTO-220-3
Current Rating-12A
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi BDW94C technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | -100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | -12A |
| Emitter Base Voltage (VEBO) | 2.5V |
| Height | 9.4mm |
| hFE Min | 1000 |
| Lead Free | Lead Free |
| Length | 10.1mm |
| Max Collector Current | 12A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 80W |
| Mount | Through Hole |
| Package Quantity | 200 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 80W |
| RoHS Compliant | Yes |
| DC Rated Voltage | -100V |
| Weight | 1.8g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BDW94C Datasheet
Download the complete datasheet for Onsemi BDW94C to view detailed technical specifications.
No datasheet is available for this part.