PNP Epitaxial Silicon Bipolar Darlington Transistor featuring a 100V Collector-Emitter Voltage (VCEO) and a 12A Max Collector Current. This through-hole component offers a high DC current gain (hFE) of 1000 and a maximum power dissipation of 80W. Encased in a TO-220-3 package with tin, matte plating, it operates within a temperature range of -65°C to 150°C. The transistor is RoHS compliant and lead-free.
PackageTO-220-3
Current Rating-12A
MountingThrough Hole
PolarityPNP
Quick Jump:
Technical Specifications
Onsemi BDW94CFTU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | -100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 3V |
| Contact Plating | Tin, Matte |
| Current Rating | -12A |
| Emitter Base Voltage (VEBO) | 2.5V |
| Height | 15.95mm |
| hFE Min | 1000 |
| Lead Free | Lead Free |
| Length | 9.9mm |
| Max Collector Current | 12A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 80W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -100V |
| Weight | 2.27g |
| Width | 4.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BDW94CFTU Datasheet
Download the complete datasheet for Onsemi BDW94CFTU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
