NPN bipolar junction transistor (BJT) in a TO-220-3 package, designed for through-hole mounting. Features a 100V collector-emitter breakdown voltage and a continuous collector current rating of 10A. Offers a maximum power dissipation of 70W and operates across a temperature range of -65°C to 150°C. Includes a minimum hFE of 750, a 5V emitter-base voltage, and a collector-emitter saturation voltage of 2.5V. This component is lead-free and RoHS compliant.
PackageTO-220-3
Current Rating10A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi BDX33C technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector-emitter Voltage-Max | 2.5V |
| Continuous Collector Current | 10A |
| Current Rating | 10A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 9.4mm |
| hFE Min | 750 |
| Lead Free | Lead Free |
| Length | 10.1mm |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 70W |
| Mount | Through Hole |
| Package Quantity | 200 |
| Packaging | Bulk |
| Polarity | NPN |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Weight | 1.8g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BDX33C Datasheet
Download the complete datasheet for Onsemi BDX33C to view detailed technical specifications.
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