
NPN Darlington bipolar junction transistor (BJT) with a 100V collector-emitter voltage (VCEO) and 10A continuous collector current. Features a maximum power dissipation of 70W and a low collector-emitter saturation voltage of 2.5V. This TO-220-3 packaged component offers a minimum hFE of 750 and operates across a wide temperature range from -65°C to 150°C. It is RoHS compliant and packaged in a tube.
Onsemi BDX33CG technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 2.5V |
| Contact Plating | Tin, Matte |
| Continuous Collector Current | 4A |
| Current Rating | 10A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 15.75mm |
| hFE Min | 750 |
| Lead Free | Lead Free |
| Length | 10.53mm |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 70W |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 70W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Weight | 0.211644oz |
| Width | 4.83mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BDX33CG to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
