PNP Bipolar Junction Transistor (BJT) in a TO-220-3 package. Features a maximum collector-emitter voltage (VCEO) of 80V and a continuous collector current (IC) of -10A. Offers a maximum power dissipation of 70W and a minimum hFE of 750. Designed for through-hole mounting, this RoHS compliant component operates within a temperature range of -65°C to 150°C.
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Onsemi BDX34BTU technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 2.5V |
| Continuous Collector Current | -10A |
| Current Rating | -10A |
| hFE Min | 750 |
| Lead Free | Lead Free |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 70W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 70W |
| RoHS Compliant | Yes |
| Series | BDX34B |
| DC Rated Voltage | -80V |
| Weight | 1.8g |
| RoHS | Compliant |
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