PNP bipolar junction transistor (BJT) in a TO-220-3 package. Features a 100V collector-emitter breakdown voltage and a maximum collector current of 8A. Offers a minimum DC current gain (hFE) of 750 and a maximum power dissipation of 65W. Operates within a temperature range of -65°C to 150°C. RoHS compliant with tin-matte contact plating.
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| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 2V |
| Contact Plating | Tin, Matte |
| Current Rating | -8A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 15.75mm |
| hFE Min | 750 |
| Lead Free | Lead Free |
| Length | 10.53mm |
| Max Collector Current | 8A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 65W |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 65W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -100V |
| Weight | 0.211644oz |
| Width | 4.83mm |
| RoHS | Compliant |
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