NPN Bipolar Junction Transistor (BJT) for RF applications, featuring a 1.1GHz transition frequency and gain bandwidth product. This through-hole component offers a 25V collector-emitter breakdown voltage and a continuous collector current rating of 50mA. Housed in a TO-92 package, it operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 350mW.
Frequency1.1GHz
PackageTO-92
Current Rating50mA
MountingThrough Hole
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Technical Specifications
Onsemi BF199 technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 25V |
| Continuous Collector Current | 50mA |
| Current Rating | 50mA |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 1.1GHz |
| Gain Bandwidth Product | 1.1GHz |
| hFE Min | 38 |
| Lead Free | Lead Free |
| Max Collector Current | 50mA |
| Max Frequency | 1.1GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 350mW |
| Reach SVHC Compliant | No |
| Transition Frequency | 1.1GHz |
| DC Rated Voltage | 25V |
| Weight | 0.202g |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi BF199 Datasheet
Download the complete datasheet for Onsemi BF199 to view detailed technical specifications.
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