
The BF199_J35Z is a TO-92 packaged NPN transistor with a collector-emitter breakdown voltage of 25V and a maximum collector current of 50mA. It has a maximum power dissipation of 350mW and operates over a temperature range of -55°C to 150°C. The transistor is available in bulk packaging with 2000 units per package.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi BF199_J35Z datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 25V |
| Continuous Collector Current | 50mA |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 1.1GHz |
| Gain Bandwidth Product | 1.1GHz |
| Max Collector Current | 50mA |
| Max Frequency | 1.1GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| Transition Frequency | 1.1GHz |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BF199_J35Z to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
