The BF199_J35Z is a TO-92 packaged NPN transistor with a collector-emitter breakdown voltage of 25V and a maximum collector current of 50mA. It has a maximum power dissipation of 350mW and operates over a temperature range of -55°C to 150°C. The transistor is available in bulk packaging with 2000 units per package.
Frequency1.1GHz
PackageTO-92
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi BF199_J35Z technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 25V |
| Continuous Collector Current | 50mA |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 1.1GHz |
| Gain Bandwidth Product | 1.1GHz |
| Max Collector Current | 50mA |
| Max Frequency | 1.1GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| Transition Frequency | 1.1GHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BF199_J35Z Datasheet
Download the complete datasheet for Onsemi BF199_J35Z to view detailed technical specifications.
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