NPN Bipolar Junction Transistor (BJT) designed for RF applications. Features a 40V collector-emitter breakdown voltage and a maximum collector current of 50mA. Offers a high transition frequency of 1.1GHz, suitable for high-frequency circuits. Packaged in a TO-92 through-hole mount, this RoHS compliant component operates within a temperature range of -55°C to 150°C.
Frequency1.1GHz
PackageTO-92
Current Rating50mA
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi BF240_ND74Z technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 40V |
| Current Rating | 50mA |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 1.1GHz |
| Gain Bandwidth Product | 1.1GHz |
| hFE Min | 65 |
| Lead Free | Lead Free |
| Max Collector Current | 50mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 350mW |
| RoHS Compliant | Yes |
| Transition Frequency | 1.1GHz |
| DC Rated Voltage | 40V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BF240_ND74Z Datasheet
Download the complete datasheet for Onsemi BF240_ND74Z to view detailed technical specifications.
No datasheet is available for this part.
Product Images
