N-Channel JFET, single element, TO-92 package. Features 200V drain-source breakdown voltage, 250mA continuous drain current, and 8 Ohm drain-source on-resistance. Operates from -55°C to 150°C with 350mW power dissipation. Includes 150pF input capacitance and 15ns turn-on/off delay times. Lead-free and RoHS compliant.
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Onsemi BS108ZL1G technical specifications.
| Package/Case | TO-92 |
| Contact Plating | Copper, Tin, Silver |
| Continuous Drain Current (ID) | 250mA |
| Current Rating | 250mA |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 8R |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 8R |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 5.33mm |
| Input Capacitance | 150pF |
| Lead Free | Lead Free |
| Length | 5.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Cut Tape |
| Polarity | N-CHANNEL |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| Rds On Max | 8R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 200V |
| Width | 4.19mm |
| RoHS | Compliant |
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