N-Channel JFET, single element, TO-92 package. Features 200V drain-source breakdown voltage, 250mA continuous drain current, and 8 Ohm drain-source on-resistance. Operates from -55°C to 150°C with 350mW power dissipation. Includes 150pF input capacitance and 15ns turn-on/off delay times. Lead-free and RoHS compliant.
PackageTO-92
Current Rating250mA
PolarityN-CHANNEL
Power350mW
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Technical Specifications
Onsemi BS108ZL1G technical specifications.
General
Package/Case
TO-92
Contact Plating
Copper, Tin, Silver
Continuous Drain Current (ID)
250mA
Current Rating
250mA
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
8R
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
8R
Element Configuration
Single
Gate to Source Voltage (Vgs)
20V
Height
5.33mm
Input Capacitance
150pF
Lead Free
Lead Free
Length
5.2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
350mW
Number of Elements
1
Package Quantity
2000
Packaging
Cut Tape
Polarity
N-CHANNEL
Power Dissipation
350mW
Radiation Hardening
No
Rds On Max
8R
RoHS Compliant
Yes
Turn-Off Delay Time
15ns
Turn-On Delay Time
15ns
DC Rated Voltage
200V
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BS108ZL1G Datasheet
Download the complete datasheet for Onsemi BS108ZL1G to view detailed technical specifications.
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