Single N-Channel JFET, designed for small signal applications, features a 60V drain-source breakdown voltage and a continuous drain current of 500mA. This through-hole component offers a maximum drain-source on-resistance of 5 Ohms and a typical gate-source voltage of 2.1V. Encased in a TO-92 package with copper, tin, and silver contact plating, it operates within a temperature range of -55°C to 150°C and has a power dissipation of 830mW.
PackageTO-92
Voltage60V
Current Rating500mA
MountingThrough Hole
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Technical Specifications
Onsemi BS170 technical specifications.
General
Package/Case
TO-92
Contact Plating
Copper, Tin, Silver
Continuous Drain Current (ID)
500mA
Current Rating
500mA
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
1.2R
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
5R
Gate to Source Voltage (Vgs)
20V
Height
5.33mm
Input Capacitance
40pF
Lead Free
Lead Free
Length
5.2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
830mW
Mount
Through Hole
Nominal Vgs
2.1V
Number of Elements
1
Package Quantity
2000
Packaging
Bulk
Polarity
N-CHANNEL
Power Dissipation
830mW
Radiation Hardening
No
Rds On Max
5R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
2.1V
Voltage
60V
DC Rated Voltage
60V
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BS170 Datasheet
Download the complete datasheet for Onsemi BS170 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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