Single N-Channel JFET, designed for small signal applications, features a 60V drain-source breakdown voltage and a continuous drain current of 500mA. This through-hole component offers a maximum drain-source on-resistance of 5 Ohms and a typical gate-source voltage of 2.1V. Encased in a TO-92 package with copper, tin, and silver contact plating, it operates within a temperature range of -55°C to 150°C and has a power dissipation of 830mW.
PackageTO-92
Voltage60V
Current Rating500mA
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi BS170 technical specifications.
General
| Package/Case | TO-92 |
| Contact Plating | Copper, Tin, Silver |
| Continuous Drain Current (ID) | 500mA |
| Current Rating | 500mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 5R |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 5.33mm |
| Input Capacitance | 40pF |
| Lead Free | Lead Free |
| Length | 5.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830mW |
| Mount | Through Hole |
| Nominal Vgs | 2.1V |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 830mW |
| Radiation Hardening | No |
| Rds On Max | 5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 2.1V |
| Voltage | 60V |
| DC Rated Voltage | 60V |
| Width | 4.19mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BS170 Datasheet
Download the complete datasheet for Onsemi BS170 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
