N-Channel JFET, TO-92 package, featuring 60V drain-source voltage and 500mA continuous drain current. This silicon Metal-oxide Semiconductor FET offers a maximum power dissipation of 830mW and a low drain-source on-resistance of 5 Ohms. With a gate-source voltage range of 20V and a threshold voltage of 2.1V, it operates from -55°C to 150°C. Contact plating includes copper, tin, and silver, with lead-free and RoHS compliance.
PackageTO-92
Current Rating500mA
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi BS170_D26Z technical specifications.
General
| Package/Case | TO-92 |
| Contact Plating | Copper, Tin, Silver |
| Continuous Drain Current (ID) | 500mA |
| Current Rating | 500mA |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 5R |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 5.33mm |
| Input Capacitance | 40pF |
| Lead Free | Lead Free |
| Length | 5.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830mW |
| Mount | Through Hole |
| Nominal Vgs | 2.1V |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Rds On Max | 5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 2.1V |
| DC Rated Voltage | 60V |
| Weight | 0.286g |
| Width | 4.19mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BS170_D26Z Datasheet
Download the complete datasheet for Onsemi BS170_D26Z to view detailed technical specifications.
No datasheet is available for this part.