N-Channel JFET, TO-226-3 package, featuring 60V drain-source voltage and 500mA continuous drain current. This single-element silicon FET offers a maximum power dissipation of 830mW and a low drain-source on-resistance of 5 Ohms. Operating temperature range spans from -55°C to 150°C, with lead-free and RoHS compliance.
PackageTO-226-3
Current Rating500mA
MountingThrough Hole
Power830mW
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Technical Specifications
Onsemi BS170_D27Z technical specifications.
General
Package/Case
TO-226-3
Contact Plating
Copper, Tin, Silver
Continuous Drain Current (ID)
500mA
Current Rating
500mA
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
5R
Element Configuration
Single
Gate to Source Voltage (Vgs)
20V
Input Capacitance
40pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
830mW
Mount
Through Hole
Nominal Vgs
2.1V
Number of Elements
1
Package Quantity
1
Packaging
Cut Tape
Power Dissipation
830mW
Radiation Hardening
No
Rds On Max
5R
Reach SVHC Compliant
No
RoHS Compliant
Yes
DC Rated Voltage
60V
Weight
0.286g
Compliance
RoHS
Compliant
Datasheet
Onsemi BS170_D27Z Datasheet
Download the complete datasheet for Onsemi BS170_D27Z to view detailed technical specifications.
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