N-Channel JFET, TO-226-3 package, featuring 60V drain-source voltage and 500mA continuous drain current. This single-element silicon FET offers a maximum power dissipation of 830mW and a low drain-source on-resistance of 5 Ohms. Operating temperature range spans from -55°C to 150°C, with lead-free and RoHS compliance.
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Onsemi BS170_D27Z technical specifications.
| Package/Case | TO-226-3 |
| Contact Plating | Copper, Tin, Silver |
| Continuous Drain Current (ID) | 500mA |
| Current Rating | 500mA |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 5R |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 40pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830mW |
| Mount | Through Hole |
| Nominal Vgs | 2.1V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 830mW |
| Radiation Hardening | No |
| Rds On Max | 5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Weight | 0.286g |
| RoHS | Compliant |
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