
NPN Darlington transistor in SOT-223-4 package, featuring an 80V collector-emitter breakdown voltage and 1A continuous collector current. This component offers a maximum collector-emitter saturation voltage of 1.3V and a power dissipation of 800mW. Operating temperature range spans from -65°C to 150°C. It is RoHS and Halogen Free compliant, supplied in tape and reel packaging.
Onsemi BSP52T1G technical specifications.
| Package/Case | SOT-223-4 |
| Collector Base Voltage (VCBO) | 90V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1.3V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 1.3V |
| Continuous Collector Current | 1A |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Halogen Free | Halogen Free |
| Height | 1.57mm |
| Lead Free | Lead Free |
| Length | 6.5mm |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 800mW |
| Number of Circuits | 4 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 800mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 80V |
| Width | 3.5mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BSP52T1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
