N-channel MOSFET transistor in a SOT-23 package, featuring a 100V drain-source breakdown voltage and a continuous drain current of 170mA. This surface-mount component offers a low drain-source on-resistance of 6 Ohms. Operating across a wide temperature range of -55°C to 150°C, it boasts fast switching speeds with a turn-on delay of 1.7ns and a fall time of 9ns. The device is RoHS compliant and designed for tape and reel packaging.
PackageSOT-23
Voltage100V
Current Rating170mA
MountingSurface Mount
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Technical Specifications
Onsemi BSS123 technical specifications.
General
Package/Case
SOT-23
Continuous Drain Current (ID)
170mA
Current Rating
170mA
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
6R
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
6R
Dual Supply Voltage
100V
Fall Time
9ns
Gate to Source Voltage (Vgs)
20V
Height
0.93mm
Input Capacitance
73pF
Lead Free
Lead Free
Length
2.92mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
360mW
Mount
Surface Mount
Nominal Vgs
1.7V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
360mW
Radiation Hardening
No
Rds On Max
6R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
1.7V
Turn-Off Delay Time
17ns
Turn-On Delay Time
1.7ns
Voltage
100V
DC Rated Voltage
100V
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BSS123 Datasheet
Download the complete datasheet for Onsemi BSS123 to view detailed technical specifications.
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