N-channel logic-level enhancement mode field-effect transistor, surface mount, SOT-23 package. Features 50V drain-source breakdown voltage, 220mA continuous drain current, and 3.5 Ohm drain-source on-resistance. Operates with a nominal gate-source voltage of 1.3V, offering fast switching with a 2.5ns turn-on delay and 9ns fall time. Maximum power dissipation is 360mW, with an operating temperature range of -55°C to 150°C. RoHS compliant and lead-free.
PackageSOT-23
Current Rating220mA
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Onsemi BSS138 technical specifications.
General
Package/Case
SOT-23
Continuous Drain Current (ID)
220mA
Current Rating
220mA
Drain to Source Breakdown Voltage
50V
Drain to Source Resistance
3.5R
Drain to Source Voltage (Vdss)
50V
Drain-source On Resistance-Max
6R
Dual Supply Voltage
50V
Element Configuration
Single
Fall Time
9ns
Gate to Source Voltage (Vgs)
20V
Height
0.93mm
Input Capacitance
27pF
Lead Free
Lead Free
Length
2.92mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
360mW
Mount
Surface Mount
Nominal Vgs
1.3V
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
360mW
Radiation Hardening
No
Rds On Max
3.5R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Threshold Voltage
1.3V
Turn-Off Delay Time
20ns
Turn-On Delay Time
2.5ns
DC Rated Voltage
50V
Weight
0.03g
Width
1.3mm
Compliance
RoHS
Compliant
Environmental
Pb-Free
Environmental
Halogen Free
Esd
HBM Class 0A, MM Class M2
Datasheet
Onsemi BSS138 Datasheet
Download the complete datasheet for Onsemi BSS138 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
