BSS138

N-channel logic-level enhancement mode field-effect transistor, surface mount, SOT-23 package. Features 50V drain-source breakdown voltage, 220mA continuous drain current, and 3.5 Ohm drain-source on-resistance. Operates with a nominal gate-source voltage of 1.3V, offering fast switching with a 2.5ns turn-on delay and 9ns fall time. Maximum power dissipation is 360mW, with an operating temperature range of -55°C to 150°C. RoHS compliant and lead-free.