BSS138K

N-Channel Logic Level Enhancement Mode Field Effect Transistor, 50V Drain to Source Breakdown Voltage, 220mA Continuous Drain Current, and 1.6 Ohm maximum Drain-Source On Resistance. This single-element transistor features a 600mV nominal Gate to Source Voltage and 58pF input capacitance. Packaged in a SOT-23 surface mount case with tin, matte contact plating, it operates from -55°C to 150°C with 350mW maximum power dissipation. Ideal for switching applications, it offers fast switching speeds with turn-on delay times of 5ns and fall times of 35ns.