Single N-Channel Logic Level Power MOSFET, 50V Drain-Source Breakdown Voltage, 200mA Continuous Drain Current, and 3.5 Ohm maximum Drain-Source On Resistance. Features a SOT-23-3 package, 50pF input capacitance, and 225mW power dissipation. Operates from -55°C to 150°C, with a nominal gate-source threshold voltage of 500mV. RoHS and Halogen Free compliant.
PackageSOT-23-3
Current Rating200mA
PolarityN-CHANNEL
Power225mW
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Technical Specifications
Onsemi BSS138LT3G technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
200mA
Current Rating
200mA
Drain to Source Breakdown Voltage
50V
Drain to Source Resistance
3.5R
Drain to Source Voltage (Vdss)
50V
Drain-source On Resistance-Max
3.5R
Element Configuration
Single
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Height
0.94mm
Input Capacitance
50pF
Lead Free
Lead Free
Length
2.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
225mW
Nominal Vgs
500mV
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
225mW
Radiation Hardening
No
Rds On Max
3.5R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
500mV
Turn-Off Delay Time
20ns
Turn-On Delay Time
20ns
DC Rated Voltage
50V
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BSS138LT3G Datasheet
Download the complete datasheet for Onsemi BSS138LT3G to view detailed technical specifications.
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