PNP Bipolar Junction Transistor (BJT) in a SOT-23 surface mount package. Features a 100V collector-emitter voltage (VCEO) and a 200mA maximum collector current. Offers a 50MHz transition frequency and a minimum hFE of 30. Operates within a temperature range of -55°C to 150°C with 350mW power dissipation. RoHS compliant and lead-free.
Frequency50MHz
PackageSOT-23
Current Rating-200mA
MountingSurface Mount
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Technical Specifications
Onsemi BSS63 technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
-110V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
250mV
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
250mV
Contact Plating
Tin, Matte
Current Rating
-200mA
Emitter Base Voltage (VEBO)
-6V
Frequency
50MHz
Gain Bandwidth Product
50MHz
Height
0.93mm
hFE Min
30
Lead Free
Lead Free
Length
2.92mm
Max Breakdown Voltage
100V
Max Collector Current
200mA
Max Frequency
50MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
350mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
350mW
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Transition Frequency
50MHz
DC Rated Voltage
-100V
Weight
0.03g
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BSS63 Datasheet
Download the complete datasheet for Onsemi BSS63 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.