NPN bipolar junction transistor for general-purpose amplification. Features 80V collector-emitter breakdown voltage and 200mA maximum collector current. Operates with a 60MHz transition frequency and offers a minimum hFE of 20. Housed in a SOT-23 surface-mount package, this component is lead-free, RoHS compliant, and supplied on a 3000-piece tape and reel. Maximum power dissipation is 350mW.
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Onsemi BSS64 technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 120V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 200mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 200mV |
| Contact Plating | Tin, Matte |
| Current Rating | -200mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 60MHz |
| Gain Bandwidth Product | 60MHz |
| Height | 0.93mm |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Length | 2.92mm |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 200mA |
| Max Frequency | 60MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 350mW |
| RoHS Compliant | Yes |
| Transition Frequency | 60MHz |
| DC Rated Voltage | -80V |
| Weight | 0.03g |
| Width | 1.3mm |
| RoHS | Compliant |
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