NPN bipolar junction transistor for general-purpose amplification. Features 80V collector-emitter breakdown voltage and 200mA maximum collector current. Operates with a 60MHz transition frequency and offers a minimum hFE of 20. Housed in a SOT-23 surface-mount package, this component is lead-free, RoHS compliant, and supplied on a 3000-piece tape and reel. Maximum power dissipation is 350mW.
Frequency60MHz
PackageSOT-23
Current Rating-200mA
MountingSurface Mount
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Technical Specifications
Onsemi BSS64 technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
120V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
200mV
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
200mV
Contact Plating
Tin, Matte
Current Rating
-200mA
Emitter Base Voltage (VEBO)
5V
Frequency
60MHz
Gain Bandwidth Product
60MHz
Height
0.93mm
hFE Min
20
Lead Free
Lead Free
Length
2.92mm
Max Breakdown Voltage
80V
Max Collector Current
200mA
Max Frequency
60MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
350mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
350mW
RoHS Compliant
Yes
Transition Frequency
60MHz
DC Rated Voltage
-80V
Weight
0.03g
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BSS64 Datasheet
Download the complete datasheet for Onsemi BSS64 to view detailed technical specifications.
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