Single P-Channel JFET with -50V drain-source breakdown voltage and -130mA continuous drain current. Features 10Ω drain-source resistance (Rds On Max) and 225mW power dissipation. Packaged in SOT-23-3 with tin-lead plating, operating from -55°C to 150°C. Ideal for logic-level switching applications.
Checking distributor stock and pricing after the page loads.
Onsemi BSS84LT1 technical specifications.
| Package/Case | SOT-23-3 |
| Contact Plating | Tin, Lead |
| Continuous Drain Current (ID) | 130mA |
| Current Rating | -130mA |
| Drain to Source Breakdown Voltage | 50V |
| Drain to Source Resistance | 10R |
| Drain to Source Voltage (Vdss) | 50V |
| Element Configuration | Single |
| Fall Time | 1ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 30pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225mW |
| Package Quantity | 10 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 225mW |
| Rds On Max | 10R |
| RoHS Compliant | No |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 2.5ns |
| DC Rated Voltage | -50V |
| RoHS | Not Compliant |
